OSAKA, Japan–(BUSINESS WIRE)–Panasonic Corporation today announced that it will launch the industry’s smallest enhancement-mode[1] gallium nitride (GaN)[2] power transistors (X-GaNTM)** package. The GaN is encapsulated into 8×8 dual-flat no-lead (DFN) surface-mount package. It is possible to mount the package on small area where it is difficult to mount conventionally and it is contribute to the reduction of the power consumption of industrial and consumer electronics equipment. *: In the footprints of the 600-V enhancement-mode GaN power transistors as of May 18, 2015, according to a survey by Panasonic Corporation.**: X-GaN is a trademark of Panasonic Corporation. The breakdown voltage of the transistors is 600V in an enhancement mode, and the products have achieved a high-speed switching of 200V/ns and a low on-resistance[3] of 54 to 154 mΩ. The company will ship product samples, 10A type (PGA26E19BV) and 15A type(PGA26E08BV), in July 2015. Power transistor is a semiconductor device to control power supply. GaN is one of remarkable semiconductor compounds and when it is applied to transistor, higher switching performance and higher break down voltage is...